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Preliminary Technical Data
FEATURES
Bandwidth: 8 GHz min Input Noise Current Density: 12pAHz Optical sensitivity: -19 dBm1 Differential Transimpedance /Linear Range: ADN2821_2: 2.0 k/0.20 mA p-p ADN2821_5: 5.0 k/0.08 mA p -p ADN2821_10: 10.0 k/0.04 mA p-p Power Dissipation: 150 mW Differential Output Swing: 400 mV p-p min Input Overload: 3.25 dBm @ 10 dB ER Low-F cutoff: ADN2821_10: 25 kHz w/CLF = 0.5 nF On-Chip PD filter: RF = 200 , CF = 20 pF RSSI voltage and current ratio: 0.8V/mA Die Size: 0.65 mm x 1.20 mm
11.1 Gbps 3.3V Transimpedance Amplifier ADN2821
PRODUCT DESCRIPTION
The ADN2821_2/5/10 are a series of compact, high performance SiGe 3.3V power supply Trans-impedance Amplifiers (TIAs) optimized for small form factor 10Gbps Metro-Access and Ethernet PD-TIA modules. The ADN2821 series features low input referred noise current and a range of trans-impedance gains, suitable for driving a typical CDR or transceiver directly. 8GHz minimum BW enables up to 11.1Gbps operation; 1.1A input referred noise current enables -19dBm sensitivity; 3.25dBm input overload current at a 10dB extinction ratio. RSSI output signal proportional to average input current is available for monitoring and alarm generation. For assembly in small form factor packages, the ADN2821 series integrates a photodiode filter RFCF network on chip and features 25kHz low frequency cutoff with small 0.5nF external capacitor The ADN2821 operates with a 3.3V 0.3V power supply and is available in die form.
APPLICATIONS
10.7 Gbps Optical Modules SONET/SDH OC-192/STM-64 and 10 GbE Receivers, Transceivers, Transponders
1
10-12 BER, 10 dB extinction ratio, 0.85 A/W PD responsivity.
FUNCTIONAL BLOCK DIAGRAM
3.3V VCC_FILT ER 200 FI LT ER IN VCC 50 50 OU T OU T B
500
20pF 0.85V 10mA
RSSI
GN D GN D CL F
Figure 1. ADN2821 Block Diagram.
Rev. PrL
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.326.8703 (c) 2004 Analog Devices, Inc. All rights reserved.
ADN2821 TABLE OF CONTENTS
Electrical Specifications ................................................................... 3 Absolute Maximum Ratings............................................................ 4 ESD Caution.................................................................................. 4 Pad Descriptions............................................................................... 5 Pad Layout ......................................................................................... 6
Preliminary Technical Data
Pad Coordinates ............................................................................6 Die Information.............................................................................6 Assembly Recommendations...........................................................7 Ordering Guide..................................................................................8
REVISION HISTORY
Revision PrL: Preliminary Version 11/04 Revision Pr-A: Add RSSI function Spec.
Rev. PrL| Page 2 of 8
Preliminary Technical Data ELECTRICAL SPECIFICATIONS
Table 1.
Parameter DYNAMIC PERFORMANCE Bandwidth (BW)2 Total Input RMS Noise (IRMS)2 Small Signal Trans-impedance (TZ) Conditions1 -3 dB DC to 10GHz ADN2821_2, 100 MHz ADN2821_5, 100 MHz ADN2821_10, 100 MHz 50 MHz to 5 GHz 50 MHz to 8 GHz CLF = 1000 pF DC to 8 GHz, differential IIN,PK- PK = 2.0 mA, 4 dB ER Pav, 10-12 BER, 10 dB ER p-p diff, IIN,PK- PK = 2.5mA p-p, < 1 dB gain compression <10MHz IIN,AVE = 0.1 mA, Vcc = 3.3 V 5% single-ended RF CF IIN, AVE = 0 uA to 1 mA IIN, AVE = 0 uA Min 8 1500 3500 6000 Typ 9.5 1.1 2000 5000 10000 1 10 15 -12 5 3.25 520 400 TBD 150 0.85 50 200 20 0.8 TBD Max
ADN2821
Units GHz A V/A V/A V/A dB ps kHz dB ps dBm mV mV dB mW V pF V/mA mV
1.3 2500 6500 15000
Trans-impedance Ripple2 Group Delay Variation2 Low Frequency Cut-Off Output Return Loss2 Total pk-pk Jitter2 Input Overload Current3, 2 Maximum Output Swing Linear Output Range Power Supply Noise Rejection DC PERFORMANCE Power Dissipation Input Voltage Output Impedance PD FILTER Resistance PD FILTER Capacitance RSSI Sensitivity RSSI Offset
-10 TBD 650
TBD 400
200
1 2
Min/Max Vcc = +3.3V 0.3V, Ta = -40C to +95C; Typ Vcc = 3.3V, Tambient = +25C Photodiode capacitance CD = 0.22pF 0.04pF, Photodiode resistance = 15, CB = 100pF Bond inductance LIN = LFILTER = 0.3nH 0.1nH; LOUT = LOUTB = 0.5nH 0.1nH Load impedance = 50 (each output, AC coupled) 3 10-12 BER, 10dB extinction ratio, 0.85 A/W PD responsivity
Rev. PrL | Page 3 of 8
ADN2821 ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Supply Voltage (Vcc to Gnd) Internal Power Dissipation Output Short Circuit Duration Maximum Input Current Storage Temperature Range Operating Ambient Temperature Range Maximum Junction Temperature Die Attach Temperature (<60 seconds) Rating 5V Indefinite 10 mA -65C to +125C -40C to +95C +165C +450C
Preliminary Technical Data
Stresses above those listed under `Absolute Maximum Rating' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
Rev. PrL| Page 4 of 8
Preliminary Technical Data PAD DESCRIPTIONS
ADN2821
B FI LT ER
RSSI
Table 3.
Pad No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Pad GND IN TEST FILTER FILTER GND RSSI CAP GND GND OUTB OUT GND GND VCCFILTER VCC VCC Function Ground (input return) Current input. Bond directly to PD anode. Test probe Pad. Leave Floating. Filter Output. Filter Output. Ground Voltage Output (provides average input current reading) Low Frequency set point. Connect with .5nF capacitance to GND for <30kHz Ground Ground (output return) Negative Output. Drives 50 ohm termination (AC or DC termination) Positive Output. Drives 50 ohm termination (AC or DC termination) Ground (output return) Ground Filter Supply. Connect to Vcc to enable on-chip 200 ohm*20pf Filter. 3.3 V positive Supply. Recommended bypass to GND is 100 pF RF capacitor. 3.3 V positive Supply. Recommended bypass to GND is 100 pF RF capacitor.
Rev. PrL | Page 5 of 8
ADN2821 PAD LAYOUT
Preliminary Technical Data
B FI LT ER
RSSI
Figure 2.. Pad Layout
PAD COORDINATES
Table 4.
PAD # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 PAD GND IN TEST FILTER FILTER GND RSSI CAP GND GND OUTB OUT GND GND VCCFILTER VCC VCC X (um) -500 -500 -500 -500 -500 -350 -200 -50 130 500 350 350 500 130 -50 -200 -350 Y (um) 260 130 10 -120 -260 -260 -260 -260 -260 -260 -60 60 260 260 260 260 260
DIE INFORMATION
Die Size
0.7mm x 1.2mm (edge-edge including 1mil scribe)
Die Thickness
10mils = 0.25mm
Passivation Openings
0.075 mm x 0.075 mm (pads 1-8, 9, 10, 13, 15, 16, 17) 0.144mm x 0.075mm (pads 9, 11, 12, 14)
Passivation Composition
5000A Si3N4 (top) +5000 A SiO2 (bot)
Pad Composition
Al/1%Cu
Backside Contact
Rev. PrL| Page 6 of 8
Preliminary Technical Data ASSEMBLY RECOMMENDATIONS
ADN2821
VPD
VCC
560pF 1000pF 200pF
OUTB
OUT
Figure 3. 5-Pin TO-46 w/External Photodiode Supply VPD
* * * * *
1x VENDOR SPECIFIC (0.3mm x 0.3mm) 10.0Gbps Photo Diode 1x ADN2821 (0.7mm x 1.2mm) Analog Devices SiGe 10.0Gbps Trans-Impedance Amplifier 200pF RF Single Layer Capacitor 560pF RF Single Layer Capacitor 1000pF Ceramic Cap
Notes: 1. 2. 3. 4. 5. Minimize all GND bond wire lengths. Minimize IN, FILTER, OUT and OUTB bond wire lengths. Maintain symmetry in length and orientation between IN and FILTER bond wires. Maintain symmetry in length and orientation between OUT and OUTB bond wires. Maintain symmetry between IN/FILTER and OUT/OUTB bond wires.
Rev. PrL | Page 7 of 8
ADN2821 ORDERING GUIDE
Model ADN2821XCHIP-02KWP ADN2821XCHIP-05KWP ADN2821XCHIP-10KWP Temperature -40oC to 95oC -40oC to 95oC -40oC to 95oC Package Description NA NA NA
Preliminary Technical Data
Package Option Tested Die Tested Die Tested Die
(c) 2004 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective companies. Printed in the U.S.A. PR04369-0-11/04(PrL)
Rev. PrL| Page 8 of 8
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